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International Journal of
Research in Advanced Engineering and Technology
ARCHIVES
VOL. 5, ISSUE 4 (2019)
Characteristics and mechanism of transfer of current in multi-barrier arsenide gallium heterostructures
Authors
Zoirova LKH, Khashimova PHS, Mardonova YO, Abdiraxmonov USH, Kulmamatova MM
Abstract
At the present stage, the development of optoelectronics and telecommunications systems involves studying the effects of the interaction between optical radiation and the electrons of a substance, and covers the problems of creating optoelectronic instruments in which these effects are used to generate, transmit, store and display information. The forthcoming tasks of optoelectronics and telecommunications systems are miniaturization of the element base, integration of elements and functions, orientation to special technologies and materials.
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Pages:69-74
How to cite this article:
Zoirova LKH, Khashimova PHS, Mardonova YO, Abdiraxmonov USH, Kulmamatova MM "Characteristics and mechanism of transfer of current in multi-barrier arsenide gallium heterostructures". International Journal of Research in Advanced Engineering and Technology, Vol 5, Issue 4, 2019, Pages 69-74
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